OperaV1, Main, Exploration, bibRecord, 000655

Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Identifieur interne : 000655 ( Main/Exploration ); précédent : 000654; suivant : 000656

Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Auteurs : M. Rosinski [Pologne] ; P. Gasior [Pologne] ; E. Fazio [Italie] ; L. Ando [Italie] ; L. Giuffrida [Italie] ; L. Torrisi [Italie] ; P. Parys [Pologne] ; A. M. Mezzasalma [Italie] ; J. Wolowski [Pologne]

Source :

Applied surface science [ 0169-4332 ] ; 2013.

RBID : Pascal:13-0273489

Descripteurs français

Pascal (Inist)
- Germanium, Implantation ion, Ge.

English descriptors

KwdEn :
- Germanium, Ion implantation.

Abstract

The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment.

Affiliations:

Italie, Pologne

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Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Germanium</term>
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<front><div type="abstract" xml:lang="en">The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment.</div>
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Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri